IGBT and Super Junction MOSFET Market Size, Share, By Product Type (IGBT and Superior Junction MOSFET), Application (UPS, Energy and Power, Electric Vehicle, Industrial System, Consumer Electronics & Others), and Region - Trends, Analysis, and Forecast till 2035

Report Code: PMI100119 | Publish Date: April 2024 | No. of Pages: 168

Global IGBT And Super Junction Overview

  • IGBT and super junction MOSFET market size is projected to grow at USD 46.4 Billion by 2035.
  • The target market size was valued at USD 15.3 Billion in 2024.
  • The market is growing at a CAGR of 13.1%.

Market Overview:

IGBT (Insulated-Gate Bipolar Transistors) and Super Junction MOSFET (Metal Oxide Silicon Field Effect Transistors) are electronic components used in high-voltage, and high-current applications and are used to improve switching speed and efficacy. Additionally, it is used in a variety of devices such as electric vehicles, solar invertors, and consumer electronics. There are certain advantages of IGBT and super junction MOSFET, such as, super junction MOSFETs, have faster switching speed, lower conduction losses, and simpler drive circuitry and are used in circuits to switch or amplify voltages, however, IGBTs exhibit lower switching losses and higher short-circuit withstand capability. These factors pitch the IGBT and super junction MOSFET market growth.

Key Takeaways:

  • Asia Pacific has the highest market share, due to their rapid urbanization and industrialization which led to increased demand for efficient power management solutions.
  • North America is estimated to be the fastest growing market, during the forecast period owing to their increased investment in automation and consumer electronics.

IGBT and Super Junction MOSFET Market Forecast Period 2025-2035

Global IGBT And Super Junction Drivers & Restraints

Key Drivers of Target Market:

Improving the Switching Speed and Efficiency of IGBTs and Super Junction MOSFETs is expected to Foster the Market Growth

IGBTs and super junction MOSFETs are semiconductor devices that improve switching speed and efficiency, and as it enables high-speed switching, it reduces the power loss and improves the efficiency. This factor helps in the usage of these semiconductor devices in various applications such as electric vehicles, renewable energy systems, and power grids.

  • For instance, in June 2023, Toshiba Electronic Devices & Storage Corporation expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation processes, with a 600V super junction structure suitable for data centers, switching power supplies, and power conditioners for photovoltaic generators. This new product, TK055U60Z1, helps to improve efficiency of power supplies.

Restraints:

High Cost of Production May Impede Market Expansion

Due to the cost of materials and the complexity of manufacturing, IGBTs and super junction MOSFETs become expensive. Additionally, it is not easily adopted in cost-sensitive applications, such as consumer electronics or small-scale renewable energy systems, hindering the market growth.

  • Counterbalance Statements: Developing hybrid modules, scale production using automated and advanced fabrication techniques, and the collaboration of government and industry can help to minimize the market growth from hindering.

Opportunities:

Miniaturization of IGBTs is Expected to Boost the Market Expansions

Insulated-gate bipolar transistors (IGBTs) are becoming smaller and more powerful due to the miniaturization of hardware and the development of microelectronics. This trend is driven by the need for more compact devices that can be used in portable and flexible applications. Miniaturization of IGBTs will contribute in energy saving and reducing power loss, thereby, boosting the market expansion. 

  • For Instance, in October 2024, BASF SE, developed Ultramid Advanced N3U41 G6, which is polyphthalamide (PPA), and is used to house IGBT semiconductors in power electronics. The PPA is designed to reduce the creepage and improve the insulation, thereby helping in miniaturizing the IGBTs.

Global IGBT And Super Junction Segmentations & Regional Insights

The market is segmented into product type, application, and region.

Product Type

The market can be categorized into IGBT and super junction MOSFET, on the basis of product type. The insulated gate bipolar transistors (IGBTs) has the largest IGBT and super junction MOSFET market share as it is reliable and can handle high voltages and currents. Additionally, it is also used in various applications such as electronics, industrial systems, and electric vehicles.

  • For instance, in January 2025, Mitsubishi Electric Corporation, announced that from February onwards, it will provide samples of their new LV100-type 1.2-kV IGBT module as an industrial-use power semiconductor module for solar and other renewable-energy power-supply systems. Equipped with an eighth-generation insulated gate bipolar transistor (IGBT), the module minimizes power loss and maximizes output power of inverters and other components in power systems, such as photovoltaic power-generation systems and storage batteries.

Application

Based on application, the market can be segmented into UPS, energy and power, electric vehicle, industrial system, consumer electronics, and others.  The energy and power segment has the highest market share due to the increasing demand for efficient power conversion and management systems in renewable energy applications, such as photovoltaic inverters and wind turbine systems.

  • For instance, in October 2024, Alpha and Omega Semiconductor Limited (AOS), designer, developer and global supplier of a broad range of power semiconductors, announced its optimization of αMOS5 600V to 700V Super Junction MOSFETs, which helps designers achieve efficiency and density goals while satisfying budget goals. This High-Voltage Super Junction MOSFET portfolio, helps in driving power supply and renewable energy market growth.

Region

Geographically, the IGBT and super junction MOSFET market is studied across North America, Europe, Asia Pacific, Latin America, and Middle East & Africa.

Asia Pacific: Asia Pacific has the highest market share, due to their rapid urbanization and industrialization which led to increased demand for efficient power management solutions. Additionally, the automotive and PV inverter production in this region is also expected to grow.

  • For instance, in June 2021, Mitsubishi Electric Corporation, announced the launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) module for industrial use, the world's first IGBT with 2.0kV withstand voltage. The module was ideally suited to increase the efficiency and reduce the size of renewable-energy power converters, which were in high demand due to the growing use of renewable-energy power supplies.

North America: This region is estimated to be the fastest growing during the forecast period due to their increased investment in automation and consumer electronics. Additionally, the demand for electric and hybrid vehicles are also increasing in this region.

IGBT and Super Junction MOSFET Market By Regional Insights Forecast Period 2025-2035

  • For instance, in April 2024, Fuji Electric Co., Ltd. (FE), announced the launch of HPnC Series, which was a new series of large capacity industrial IGBT modules for applications including power convertors for solar and wind power generation systems. This was launched in order to achieve a decarbonized society, and to use renewable energy sources such as solar and wind power. Additionally, it also helped in reducing power generation costs.

IGBT and Super Junction MOSFET Market Report Scope:

Attribute

Details

Market Size 2025

USD 16.9 Billion 

Projected Market Size 2035

USD 46.4 Billion

CAGR Growth Rate

13.1 % (2025-2035)

Base year for estimation

2024

Forecast period

2025 – 2035

Market representation

Revenue in USD Billion & CAGR from 2025 to 2035

Regional scope

North America - U.S. and Canada

Europe – Germany, U.K., France, Russia, Italy, Spain, Netherlands, Rest of Europe

Asia Pacific – India, China, Japan, South Korea, Australia, Indonesia, Malaysia, and Rest of Asia-Pacific

Latin America - Brazil, Mexico, Argentina, and Rest of Latin America

Middle East & Africa – GCC, Israel, South Africa, and Rest of Middle East & Africa

Report coverage

Revenue forecast, company share, competitive landscape, growth factors, and trends

Segmentation:

By Product Type:

  • IFBT
    • Discrete IGBT
    • IGBT Module
  • Super Junction MOSFET
  • Discrete Super Junction MOSFET
  • Super Junction MOSFET Module

By Application:

  • UPS
  • Energy and Power
  • Electric Vehicle
  • Industrial System
  • Consumer Electronics
  • Others

By Region:

  • North America
    • U.S.
    • Canada
  • Europe
    • Germany
    • U.K.
    • France
    • Russia
    • Italy
    • Spain
    • Netherlands
    • Rest of Europe
  • Asia Pacific
    • India
    • China
    • Japan
    • Australia
    • Indonesia
    • Malaysia
    • South Korea
    • Rest of Asia Pacific
  • Latin America
    • Brazil
    • Mexico
    • Argentina
    • Rest of Latin America
  • Middle East & Africa
    • GCC
    • Israel
    • South Africa
    • Rest of Middle East & Africa

Global IGBT And Super Junction Competitive Landscape & Key Players

The key players operating in the IGBT and Super Junction MOSFET market include Mitsubishi Electric Corporation, ABB, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, and others. The key players are adopting strategies for the growth of the market such as integrating with other semiconductor components, product launches, and business expansion.

IGBT and Super Junction MOSFET Market Companies:

View a Additional List of Companies in IGBT and Super Junction MOSFET Market

IGBT and Super Junction MOSFET Market By Key Players Insights Forecast Period 2025-2035

Global IGBT And Super Junction Recent News

  • In August 2022, Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which was offered in a small footprint while providing low power losses. This aimed at next generation electric vehicle (EVs) inverters, AE5-generation IGBTs, and was mass produced in the first half of 2023 on Renesas’ 200- and 300-mm wafer lines at the company’s factory in Naka, Japan.
  • In July 2023, ROHM Co., Ltd., added three new models, the R60xxRNx series, to its PrestoMOS lineup of 600V Super Junction MOSFETs. These devices were optimized for driving small motors in refrigerators, ventilation fans, and other applications where noise suppression was important. This new series maintained the high-speed characteristics of PrestoMOS, while also minimized noise.

Analyst View:

The IGBT and Super Junction MOSFET market is placed for significant growth due to the driving factors of both IGBT and super junction MOSFET, such as, super junction MOSFETs, have faster switching speed, lower conduction losses, and simpler drive circuitry and are used in circuits to switch or amplify voltages. However, IGBTs exhibit higher short-circuit withstand capability. New product launches, integrating with other semiconductor components, and business expansion helps to boost the growth of the market in upcoming years.

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Global IGBT And Super Junction Company Profile

Company Name

Mitsubishi Electric Corporation

Headquarter

Chiyoda City, Tokyo, Japan

CEO

Katsuya Nakanishi

Employee Count (2024)

149,134 Employees

FAQs

IGBT and super junction MOSFET market size was valued at USD 16.9 Billion in 2025 and is expected to reach USD 46.4 Billion by 2035 growing at a CAGR of 13.1%.

The Market is segmented into product type, application, and region.

The Market is segmented by region North America, Asia Pacific, Europe, Latin America, and the Middle East & Africa. Asia Pacific is expected to dominate the market.

The key players operating in the IGBT and Super Junction MOSFET Market include Mitsubishi Electric Corporation, Infineon Technologies AG, STMicroelectronics, ABB, Hitachi, Ltd., TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Vishay Intertechnology, Inc., Fuji Electric Co., Ltd., Semikron Danfoss, ROHM Co., Ltd., MACMIC, StarPower Europe AG, NXP Semiconductors, Littelfuse, Inc., and Renesas Electronics Corporation.