Dynamic Random Access Memory (DRAM) Market, By Technology (DDR2, DDR3, DDR4, Mobile, and Graphic), By Application (Mobile Devices, PC/Laptop, Server, and Other Applications), and By Region (North America, Europe, Asia-Pacific, Latin America, and Middle East and Africa) - Trends, Analysis and Forecast till 2030

Report Code: PMI367919 | Publish Date: May 2024 | No. of Pages: 172

Global Dynamic Random Access Memory Overview

Dynamic random-access memory is a type of random access semiconductor memory. It stores each bit of data on a separate capacitor, that is, in a memory cell consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor technology. It requires less physical space to store the same amount of data than if it was stored statically.

The demand for high performance and low-power DRAM in mobile is the major driver for the target market growth. In addition, growing penetration of smartphones in developing countries such as India, China and Indonesia is propelling the target market growth. For instance, according to a data published by India Brand Equity Foundation in 2019, mobile phone manufacturing industry is expected to reach a size of USD 217 billion by 2020. Also, rise in mobile-phone penetration and decline in data costs will add 500 million new internet users in India over the next five years. Furthermore, introduction of new devices in the computing field such as hybrid device and ultra-thin notebooks are anticipated to boost the target market growth. However, emergence of substitute such as NAND flash is expected to hamper the growth of dynamic random access memory market over the forecast period.

Based on technology, the target market is segmented into DDR2, DDR3, DDR4, mobile, and graphic. Based on application, the target market is segmented into mobile devices, pc/laptop, server, and other applications.

Based on region the target market is segmented into North America, Europe, Asia-Pacific, Middle East and Africa. Asia Pacific is the anticipated to dominate the global dynamic random access memory market over the forecast period. Whereas, North America is anticipated to be the second leading target market over the forecast period.Key players operating in the global dynamic random-access memory market includes SK Hynix Inc., Micron Technology Inc., Samsung Electronics Co. Ltd., Nanya Technology Corporation, Winbond Electronics Corporation, Powerchip Technology Corporation, Intel Corporation, Texas Instruments. In October 2019, SK Hynix Inc. developed 1Znm 16Gb (Gigabits) DDR4 (Double Data Rate 4) DRAM.

Global Dynamic Random Access Memory Company Profile

  • SK Hynix Inc*
    • Company Overview
    • Product Portfolio
    • Key Highlights
    • Financial Performance
  • Micron Technology Inc.
  • Samsung Electronics Co. Ltd.
  • Nanya Technology Corporation
  • Winbond Electronics Corporation
  • Powerchip Technology Corporation
  • Intel Corporation
  • Texas Instruments

“*” marked represents similar segmentation in other categories in the respective section

FAQs

Dynamic Random Access Memory (DRAM) Market accounted for US$ 110.57 billion in 2020 and is estimated to be US$ 258.62 billion by 2030 and is anticipated to register a CAGR of 8.9%.

Dynamic Random Access Memory (DRAM) Market is segmented into technology, application, and region.

The Dynamic Random Access Memory (DRAM) Market is driven by factors such as the increasing demand for memory-intensive applications, the growth of the electronics and semiconductor industries, the proliferation of smartphones and data centers, and the need for high-speed and high-capacity memory solutions.

Cyclical demand patterns in the semiconductor industry, price volatility and market saturation for DRAM products, and the impact of global economic factors on consumer spending, acting as restraints for the Dynamic Random Access Memory (DRAM) Market globally.

Asia-Pacific, North America, Europe, and Latin America. Asia-Pacific, particularly countries like South Korea, China, and Taiwan, is expected to dominate the Dynamic Random Access Memory (DRAM) Market, driven by the concentration of major semiconductor manufacturers, strong demand from consumer electronics and data center markets, and significant investments in technology infrastructure.

The key players in the Dynamic Random Access Memory (DRAM) Market includes SK Hynix Inc., Micron Technology Inc., Samsung Electronics Co. Ltd., Nanya Technology Corporation, Winbond Electronics Corporation, Powerchip Technology Corporation, Intel Corporation, Texas Instruments.