IGBT and Super Junction MOSFET Market size is expected to develop at a rate of USD 46.4 Billion by 2035; Increasing Adoption of Electric Vehicles is fostering the Market Expansion

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Published Date: April 2025

IGBT and Super Junction MOSFET market refers to the global demand for these advanced power semiconductor devices, which are essential for high-voltage, high-current applications like electric vehicles and renewable energy. The IGBT and Super Junction MOSFET market is experiencing growth due to several factors, primarily driven by the increasing adoption of electric vehicles (EVs) and the growing demand for energy-efficient devices. Additionally, advancements in semiconductor materials and the global shift towards electrification are also contributing to the market's expansion.

Segmentation Analysis:

By Product Type	IGBT and Superior Junction MOSFET
By Application	UPS, Energy and Power, Electric Vehicle, Industrial System, Consumer Electronics & Others

Report Highlights:

IGBT and Super Junction MOSFET Market size is accounted at USD 1065.8 Billion in 2025.
Target Market size is expected to develop at a rate of USD 46.4 Billion by 2035 and at a CAGR of 13.1%.
According to product type, the insulated gate bipolar transistors (IGBTs) are the dominating segment in the IGBT and super junction MOSFET market share.
On the basis of application, the energy and power segment is attributed to rule over the IGBT and super junction MOSFET market.
By region, Asia Pacific is the region which has the leading IGBT and super junction MOSFET market share.
North America is the region which is expected to have the fastest growing IGBT and super junction MOSFET market.

Market Dynamics:

Growing Factor	Challenge Factor	Market Trend
Growing Demand For Energy-Efficient Devices	Lower Switching Speed Of IGBT And Super Junction MOSFET	Integration Of Advanced Technologies With IGBT And Super Junction MOSFET

Key Highlights:

In March 2025, Magnachip Semiconductor Corporation (“Magnachip” or “Company”) announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate Bipolar Transistors (IGBTs), specifically designed for solar inverters. The newly introduced Gen6 IGBTs, incorporating polyimide insulation layers, demonstrate outstanding performance by passing high-voltage, high-humidity and high-temperature reverse bias (HV-H3TRB) tests. These products offer dependable reliability in industrial equipment operating under extreme conditions, including elevated temperatures and humidity.

Report Analysis:

Three Main Operating Conditions for IGBTs:

Operation in short circuit: The current in the IGBT is limited by its gate voltage and trans conductance and can reach values well in excess of 10 times its continuous rating.
Inductive turn-off, sometimes referred to as "clamped IL": In an inductive turn-off the voltage swings from a few volts to the supply voltage with constant current and with no channel current (gate voltage has gone to zero).
Operation as a linear amplifier: Linear operation exercises the SOA of the IGBT in a combination of the two modes described above.

Browse ∼60 market data tables and ∼55 figures through ∼160 slides and in-depth TOC on “IGBT and Super Junction MOSFET Market, By Product Type (IGBT and Superior Junction MOSFET), Application (UPS, Energy and Power, Electric Vehicle, Industrial System, Consumer Electronics & Others), and By Region - Trends, Analysis, and Forecast till 2035”

Segmentation:

By Product Type:

IFBT
- Discrete IGBT
- IGBT Module
Super Junction MOSFET

Discrete Super Junction MOSFET
Super Junction MOSFET Module

By Application:

UPS
Energy and Power
Electric Vehicle
Industrial System
Consumer Electronics
Others

By Region:

North America
- U.S.
- Canada
Europe
- Germany
- U.K.
- France
- Russia
- Italy
- Spain
- Netherlands
- Rest of Europe
Asia Pacific
- China
- India
- Japan
- Australia
- Indonesia
- Malaysia
- South Korea
- Rest of Asia Pacific
Latin America
- Brazil
- Mexico
- Argentina
- Rest of Latin America
Middle East & Africa
- GCC
- Israel
- South Africa
- Rest of Middle East & Africa

For more insights into the IGBT and Super Junction MOSFET Market and its future trends, visit link below: https://www.prophecymarketinsights.com/market_insight/Global-IGBT-and-Super-Junction-1001

Competitive Landscape of IGBT and Super Junction MOSFET Market:

The key players operating in the IGBT and Super Junction MOSFET market include Mitsubishi Electric Corporation, ABB, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Vishay Intertechnology, Inc., Fuji Electric Co., Ltd., Semikron Danfoss, ROHM Co., Ltd., MACMIC, StarPower Europe AG, NXP Semiconductors, Littelfuse, Inc., and Renesas Electronics Corporation.